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| Ordering number : ENN7006 FW138 P-Channel Silicon MOSFET FW138 Load Switching Applications Features * * Package Dimensions unit : mm 2129 [FW138] 8 5 0.3 4.4 6.0 4V drive. Low ON-resistance. 5.0 1.5 0.1 1.8max 1 4 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 Conditions Ratings -30 20 --4 Unit V V A A W W C C PW10s, duty cycle1% Mounted on a ceramic board (1500mm 2!0.8mm) 1unit Mounted on a ceramic board (1500mm2!0.8mm) -32 1.7 2.0 150 --55 to +150 Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=-30V, VGS=0 VGS=16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--4A Ratings min --30 --1 10 --1.0 4 5.8 --2.4 typ max Unit V A A V S Marking : W138 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71001 TS IM TA-2941 No.7006-1/4 FW138 Continued from preceding page. Parameter Symbol RDS(on) 1 RDS(on) 2 RDS(on) 3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--4A, VGS=--10V ID=--2A, VGS=--4.5V ID=--2A, VGS=--4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=--10V, ID=-4A VDS=--10V, VGS=--10V, ID=-4A VDS=--10V, VGS=--10V, ID=-4A IS=--4A, VGS=0 Ratings min typ 64 94 104 560 150 95 9 18 55 60 12 2 2 --0.85 --1.5 max 84 132 146 Unit m m m pF pF pF ns ns ns ns nC nC nC V Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Switching Time Test Circuit VIN 0V --10V VIN PW=10s D.C.1% VDD= --15V Electrical Connection (Top view) D1 D1 D2 D2 ID= --4A RL=3.75 D VOUT G FW138 P.G 50 S S1 G1 S2 G2 --6 ID -- VDS .5V --4 .0 V .0V --6 .0V --10 --9 ID -- VGS VDS= --10V Ta= --25 C 75 C --7 Drain Current, ID -- A --4 Drain Current, ID -- A --6 --5 --4 --3 --2 --3 --2 --2.5V C Ta = --1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.5 --1.0 --1.5 --2.0 --2 5 VGS= --2.0V Drain-to-Source Voltage, VDS -- V 200 25 --1 C 75 C --2.5 --3.0 --3.5 25 --4.0 IT02845 140 160 IT02847 V --3.0 IT02844 200 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 150 150 --4.0A 100 ID= --2.0A 100 50 50 I D= V --4.0 5V --4. S= , VG S= A G --2.0 A, V 2.0 I D= = -ID .0V = --10 , V GS --4.0A 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 0 --60 --40 --20 0 20 40 60 80 100 120 Gate-to-Source Voltage, VGS -- V IT02846 Ambient Temperature, Ta -- C No.7006-2/4 C --5 --3 --4 .5V --8 FW138 Forward Transfer Admittance, yfs -- S 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT02848 1000 yfs -- ID VDS= --10V --10 7 5 3 2 IF -- VSD VGS=0 Forward Current, IF -- A --1.0 7 5 3 2 --0.1 7 5 3 2 Ta= 75 C --25 C 25 C Ta= 75C 25C 0 --0.2 --0.4 --0.001 --0.6 --0.8 --1.0 --1.2 IT02849 Drain Current, ID -- A 1000 7 5 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V VDD= --15V VGS= --10V Ciss, Coss, Crss -- pF 7 5 3 2 Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.1 2 3 5 td(off) tf Coss Crss 100 7 5 3 2 td(on) tr 10 7 --1.0 2 3 5 7 --10 0 --5 --10 --15 --20 IT02851 Drain Current, ID -- A --12 IT02850 --100 7 5 3 2 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --4A --10 IDP= --32A --25C --0.01 7 5 3 2 <10s 1m s Drain Current, ID -- A --8 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 100s ID= --4A DC op era 10 10 tio ms 0m s --6 n( --4 Operation in this area is limited by RDS(on). Ta = 25 C ) --2 0 0 2 4 6 8 10 12 14 IT02852 --0.01 --0.01 2 3 Ta=25C Single pulse Mounted on a ceramic board(1500mm2!0.8mm)1unit 5 7--0.1 2 3 5 7 --1.0 2 3 5 7 --10 23 Total Gate Charge, Qg -- nC 2.5 Drain-to-Source Voltage, VDS -- V 5 7--100 IT03266 PD -- Ta Mounted on a ceramic board(1500mm2!0.8mm) Allowable Power Dissipation, PD -- W 2.0 1.7 1.5 To ta 1u l di nit ssi pa tio 1.0 n 0.5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT03267 No.7006-3/4 FW138 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2001. Specifications and information herein are subject to change without notice. PS No.7006-4/4 |
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